View 2SK3081_4377208.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3081
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1064-0400 (Previous: ADE-208-636A) Rev.4.00 Sep 07,2005
Features
* Low on-resistance RDS(on) = 10 m typ. * 4 V gate drive devices. * High speed switching
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G 1. Gate 2. Drain (Flange) 3. Source S
1
2
3
Rev.4.00 Sep 07, 2005 page 1 of 6
2SK3081
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings 30 20 45 180 45 75 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 30 20 20 -- -- 1.0 -- -- 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max -- -- 10 10 2.0 14 25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 30 V, VGS = 0 VGS = 16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V Note3 ID = 20 A, VGS = 4 V Note3 ID = 20 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 20 A, RL = 0.5
IF = 45 A, VGS = 0 IF = 45 A, VGS = 0 diF/ dt = 50 A/ s
Rev.4.00 Sep 07, 2005 page 2 of 6
2SK3081
Main Characteristics
Power vs. Temperature Derating
100 1000 300 10 s
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
75
100 30 10 3 1
DC
PW
1
50
25
Operation in this area is limited by RDS(on)
Op 10 m (T erat s c = io n 25 C )
=
m
0
s
s
0
50
100
150
200
0.3 Ta = 25C 1 shot pulse 0.1 0.1 0.3 1
3
10
30
100
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 V 8 V 100 6V Pulse Test 4.5 V 60 4V 5V 100
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
80
80
Tc = -25C -25
25C 75C
60
40
3.5 V 3V
VGS = 2.5 V
40
20
20
VDS = 10 V Pulse Test
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test 50
Drain to Source Saturation Voltage VDS (on) (V)
1.0
Pulse Test
0.8
0.6 ID = 50 A 0.4 20 A 10 A 0 4 8 12 16 20
Static Drain to Source on State Resistance RDS (on) (m)
20
VGS = 4 V
0.2
10
10 V
5 1 2 5 10 20 50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 3 of 6
2SK3081
Static Drain to Source on State Resistance vs. Temperature
50 Pulse Test 40
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
50 20 10 5 75C 2 1 0.5 0.1
VDS = 10 V Pulse Test
Tc = -25C 25C
30 ID = 20 A 20
VGS = 4 V
10 A
10 10 V 0 -40 0 40 80
50 A 10, 20 A 120 160
0.3
1
3
10
30
100
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 10000 5000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
2000 1000 500 200 100 5 0 10 20
Ciss Coss
Crss
VGS = 0 f = 1 MHz
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
50 ID = 45 A 40
VGS VDS VDD = 5 V 10 V 15 V
Switching Characteristics
20 1000
16
Switching Time t (ns)
500 200 100 50 20 10 0.1
td(off) tf tr td(on) VGS = 10 V, VDD = 10 V PW = 5 s, duty < 1 %
30
12
20
8
10
VDD = 15 V 10 V 5V
4 0 100
0
20
40
60
80
0.3
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 6
2SK3081
Reverse Drain Current vs. Source to Drain Voltage
(A) Reverse Drain Current IDR
100 10 V 5V 60
VGS = 0, -5 V
80
40
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage
VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 25 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.67C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V Vout Monitor
PW (S) Waveform
90% 10% 10% 10%
Vin Vout
Vin 10 V
50
90% td(on)
90% td(off) tf
tr
Rev.4.00 Sep 07, 2005 page 5 of 6
2SK3081
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK3081-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is distributor for the latest product therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distrib information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. o Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor Techn home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to a evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life ci is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a aerospace, nuclear, or undersea repeater product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. materi 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and lic cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. http://www.renesas.com/en/network" Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

▲Up To Search▲

Price & Availability of 2SK3081

	To Download 2SK3081 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .